bzg04-series document number 85594 rev. 2.2, 15-sep-05 vishay semiconductors www.vishay.com 1 15811 zener diodes with surge current specification features ? glass passivated junction high reliability stand-off voltage range 8.2 v to 220 v excellent clamping cabability fast response time (typ. 1 ps from 0 to v zmin ) lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications protection from high voltage, high energy transients mechanical data case: do-214ac weight: approx. 77 mg packaging codes/options: tr / 1.5 k 7 " reel tr3 / 6 k 13 " reel 6 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation r thja < 25 k/w, t amb = 100 c p diss 3w r thja < 100 k/w, t amb = 50 c p diss 1.25 w non repetitive peak surge power dissipation t p = 10/1000 s sq.pulse, t j = 25 c prior to surge p zsm 300 w peak forward surge current 10 ms single half sine wave i fsm 50 a junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol value unit junction lead r thjl 25 k/w junction ambient mounted on epoxy-glass hard tissue, fig. 1a r thja 150 k/w mounted on epoxy-glass hard tissue, fig. 1b r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), fig. 1b r thja 100 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 0.5 a v f 1.2 v e3
www.vishay.com 2 document number 85594 rev. 2.2, 15-sep-05 bzg04-series vishay semiconductors electrical characteristics *) 10/1000 s pulse partnumber standoff voltage breakdown voltage tk vz @ i r clamping voltage junction capacitance v r i r v (br) @ i r v cl(r) @ i pp @ i zt c j @ v r = 0 v, f = 1 mhz v a v ma %/k v *) a *) pf max min typ max max typ bzg04-8v2 8.2 20 9.4 50 0.05 0.09 14.8 20.3 1200 bzg04-9v1 9.1 5 10.4 50 0.05 0.1 15.7 19.1 1100 bzg04-10 10 5 11.4 50 0.05 0.1 17 17.7 1000 bzg04-11 11 5 12.4 50 0.05 0.1 18.9 15.9 850 bzg04-12 12 5 13.8 50 0.05 0.1 20.9 14.4 815 bzg04-13 13 5 15.3 25 0.06 0.11 22.9 13.1 785 bzg04-15 15 5 16.8 25 0.06 0.11 25.6 11.7 710 bzg04-16 16 5 18.8 25 0.06 0.11 28.4 10.6 655 bzg04-18 18 5 20.8 25 0.06 0.11 31 9.7 610 bzg04-20 20 5 22.8 25 0.06 0.11 33.8 8.9 570 bzg04-22 22 5 25.1 25 0.06 0.11 38.1 7.9 545 bzg04-24 24 5 28 25 0.06 0.11 42.2 7.1 505 bzg04-27 27 5 31 25 0.06 0.11 46.2 6.5 475 bzg04-30 30 5 34 10 0.06 0.11 50.1 6.0 450 bzg04-33 33 5 37 10 0.06 0.11 54.1 5.5 420 bzg04-36 36 5 40 10 0.07 0.12 60.7 4.9 390 bzg04-39 39 5 44 10 0.07 0.12 65.5 4.6 370 bzg04-43 43 5 48 10 0.07 0.12 70.8 4.2 350 bzg04-47 47 5 52 10 0.07 0.12 78.6 3.8 330 bzg04-51 51 5 58 10 0.08 0.13 86.5 3.5 310 bzg04-56 56 5 64 10 0.08 0.13 94.4 3.2 291 bzg04-62 62 5 70 10 0.08 0.13 103.5 2.9 280 bzg04-68 68 5 77 10 0.08 0.13 114 2.6 275 bzg04-75 75 5 85 5 0.09 0.13 126 2.4 260 bzg04-82 82 5 94 5 0.09 0.13 139 2.2 250 bzg04-91 91 5 104 5 0.09 0.13 152 2.0 243 bzg04-100 100 5 114 5 0.09 0.13 167 1.8 170 bzg04-110 110 5 124 5 0.09 0.13 185 1.6 153 bzg04-120 120 5 138 5 0.09 0.13 204 1.5 150 bzg04-130 130 5 153 5 0.09 0.13 224 1.3 145 bzg04-150 150 5 168 5 0.09 0.13 249 1.2 140 bzg04-160 160 5 188 5 0.09 0.13 276 1.1 135 bzg04-180 180 5 208 2 0.09 0.13 305 1.0 131 bzg04-200 200 5 228 2 0.09 0.13 336 0.9 122 bzg04-220 220 5 251 2 0.09 0.13 380 0.8 120
bzg04-series document number 85594 rev. 2.2, 15-sep-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. boards for r thja definition (copper overlay 35 ) figure 2. typ. thermal resistance vs. lead length 2.0 1.5 25.0 25.0 2.0 10.0 1.0 5.0 94 9313 a) b) 0 5 10 15 25 0 10 20 30 40 r Ctherm. resist.junction/ ambient ( k/w) thja l C lead length ( mm ) 30 94 9570 20 ll t l = constant figure 3. forward current vs. forward voltage figure 4. non repetitive surge power dissipation vs. pulse length 0 0.5 1.0 1.5 0 0.5 1.0 1.5 2.0 3.0 2.0 94 9581 i C forward current (a ) f v f C forward voltag e(v) 2.5 0.01 0.1 1 10 10 100 1000 10000 p C non-repetitive surge power zsm t p C pulse length ( ms ) 100 94 9582 dissipation (w) figure 5.thermalresponse 1 10 100 1000 z Cthermal resistance for pulse cond.(k/ w thp t p C pulse lengt h(s) 94 9583 10 C5 10 C4 10 C3 10 C2 10 C1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01
www.vishay.com 4 document number 85594 rev. 2.2, 15-sep-05 bzg04-series vishay semiconductors package dimensions in mm (inches) 1962 8
bzg04-series document number 85594 rev. 2.2, 15-sep-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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